Oxide based Resistive Random Access Memory (RRAM) devices are investigated as one of the promising non-volatile memories to be used for in-memory computing that will replace the classical von Neumann architecture and reduce the power consumption. These applications required multilevel cell (MLC) characteristics that can be achieved in RRAM devices. One of the methods to achieve this analog switching behavior is by performing an optimized electrical pulse. The RRAM device structure is basically an insulator between two metals as metal-insulator-metal (MIM) structure. Where one of the primary challenges is to assign an RRAM stack with both low power consumption and good switching performance.
This thesis investigates different HfO2 based RRAM stacks and compares their electrical and MLC characteristics. By engineering the distribution of defects and oxygen vacancies in the switching layer, which have been done by exposing the dielectric with a hydrogen plasma treatment in the first device, using HfO2 and Al2O3 as a bilayer, or by adding Zr to the HfO2. While the plasma treated devices show a promising conductance quantization with low power consumption, the performance can be further enhanced by engineering the bottom electrode. The impact of introducing additional nitrogen at the bottom electrode, TiN, shows additional reduction in the switching power of the plasma treated devices.
If you have any questions please contact the ETD Team, libetd@njit.edu.
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