The New Jersey Institute of Technology's
Electronic Theses & Dissertations Project

Title:	Microwave GaAs MESFET nonlinearity and large-signal modeling
Author:	He, Yan
View Online:	njit-etd1993-092 (ix, 76 pages ~ 2.6 MB pdf)
Department:	Department of Electrical and Computer Engineering
Degree:	Master of Science
Program:	Electrical Engineering
Document Type:	Thesis
Advisory Committee:	Niver, Edip (Committee chair) Li, Kuohsiung (Committee member) Wu, Gary (Committee member)
Date:	1993-01
Keywords:	Microwave integrated circuits Metal semiconductor field-effect transistors Gallium arsenide semiconductors
Availability:	Unrestricted
Abstract:	The nonlinearity analysis for a 0.5μm gate length microwave GaAs metal-semiconductor field-effect transistor (MESFET) by HP85150B Microwave Design System was investigated. The analysis starts with the construction of a large-signal MESFET equivalent circuit model. This model consists of bias dependent elements that were extracted by the optimization of DC and small-signal S-parameter measurement data. The details on this construction procedure are included in this work. The MESFET third-order intermodulation distortion was then simulated by HP85150B Microwave Design System. Reasonable agreement was obtained between simulation and measurement results. Microwave GaAs MESFET nonlinearity principles and large-signal modeling technique review are also presented. Finally, the basis for a physics-based large-signal analytical model is outlined to the interests of a transistor or MMIC design engineer who is concerned in the microwave performance as function of device design parameters such as gate length and channel doping.