Carr, William N. (Committee chair)
Russo, Onofrio L. (Committee member)
Grow, James M. (Committee member)
Date:
1988-05
Keywords:
Silicon diodes.
Grenz rays.
X-rays.
Availability:
Unrestricted
Abstract:
An array of 30 x 30 sensing cells including logic within each cell and a self-scan address circuit are described. A unique scintillation technique is used to increase the threshold sensitivity 60dB for X-ray photon sensing beyond that obtainable with conventional photodiode sensors. Simulations for the sensing cell and some additional logic elements are based on SPICE version 2G5 and HILO 3. Worst case analysis includes variations in threshold voltage VTP and VTN for the CMOS circuit components. The final CMOS chip dimension using MOSIS 1.2 micron rules is 10mm x 10mm base on the 80µm x 80µm sensing cell size.
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