The New Jersey Institute of Technology's
Electronic Theses & Dissertations Project

Title:	Electrical, electronic and optical properties of MoSe2 and WSe2
Author:	Rassay, Sushant Shashikant
View Online:	njit-etd2017-029 (xiii, 65 pages ~ 1.4 MB pdf)
Department:	Committee for the Interdisciplinary Program in Materials Science and Engineering
Degree:	Master of Science
Program:	Materials Science and Engineering
Document Type:	Thesis
Advisory Committee:	Ravindra, N. M. (Committee chair) Zhang, Yuanwei (Committee member) Jaffe, Michael (Committee member)
Date:	2017-01
Keywords:	Semiconductors Transition-metal dichalcogenides crystals Optoelectronics
Availability:	Unrestricted
Abstract:	Transition-metal dichalcogenides (TMDC) crystals have emerged as a new class of semiconductors that display distinctive properties at monolayer thickness. Their electrical, electronic and optical properties are of particular interest and importance for applications in optoelectronics as light emitters, detectors, and photovoltaic devices. Monolayer MoSe2 and WSe2 have an intrinsic band-gap in the visible region of the solar spectrum (400nm - 700nm) which makes them distinct from other 2-D materials like graphene. In this study, the electrical, electronic and optical properties of monolayer and bulk MoSe2 and WSe2 are studied. The electronic band structures are presented for monolayer and bulk MoSe2 and WSe2. The optical properties of MoSe2 and WSe2 comprises of the determination and analysis of the spectral properties of these materials, at monolayer and bulk, in the range of 1.50 - 3.0 eV by MATLAB simulations. The optical band gaps of TMDC monolayers have been simulated from their spectral dependence of the absorption coefficient. The optical properties of these materials on silicon, gold and fused silica substrates are simulated.