The New Jersey Institute of Technology's
Electronic Theses & Dissertations Project

Title:	The In0.75Ga0.25As/In0.52Al0.48As/InP hall effect magnetic field sensor
Author:	Mitrofanov, Oleg
View Online:	njit-etd1998-077 (x, 41 pages ~ 1.5 MB pdf)
Department:	Committee for the Interdisciplinary Program in Materials Science and Engineering
Degree:	Master of Science
Program:	Materials Science and Engineering
Document Type:	Thesis
Advisory Committee:	Levy, Roland A. (Committee chair) Federici, John Francis (Committee member) Tyson, Trevor (Committee member)
Date:	1998-01
Keywords:	Semiconductors. Sensors. Magnetic devices.
Availability:	Unrestricted
Abstract:	The magnetic field sensor is produced from III-V group semiconductor materials. The structure is designed for molecular beam epitaxy growth technique (MBE) on the semiinsulating InP substrate. The sensitive element is the In0.75Ga0.25As/In0.52Al0.48As heterostructure. The sensor uses the classic Hall effect in two-dimension electron gas (2DEG) formed at pseudomorphic strained epilayer of In0.75Ga0.25As. Properties of the 2DEG are preferential for the Hall effect sensor performance. Comparatively to bulk, electron mobility is higher. The device combines high magnetic field sensitivity and temperature stability. The sensor is designed for operation at room temperatures that makes it potentially useful in various practical applications.