The New Jersey Institute of Technology's
Electronic Theses & Dissertations Project

Title:	Relaxation and the nature of electrical stress related defects in ultra-thin dioxide on silicon
Author:	Xie, Lihui
View Online:	njit-etd1997-110 (x, 70 pages ~ 2.4 MB pdf)
Department:	Committee for the Interdisciplinary Program in Materials Science and Engineering
Degree:	Master of Science
Program:	Materials Science and Engineering
Document Type:	Thesis
Advisory Committee:	Farmer, Kenneth Rudolph (Committee chair) Levy, Roland A. (Committee member) Chin, Ken K. (Committee member)
Date:	1997-01
Keywords:	Metal oxide semiconductors. Stress relaxation.
Availability:	Unrestricted
Abstract:	The instability of defects created in ultra-thin insulator, metal-oxide-silicon devices biased in the direct tunnel regime is investigated. For the case of electron injection from the silicon substrate, nearly complete defect relaxation is observed after the bias is removed, allowing the possibility of re-generating the defects. Modeling the defect generation process and examining differences between initial and subsequent degradation periods lead to an improved picture of both the relaxation process and the nature of the involved defects.