The New Jersey Institute of Technology's
Electronic Theses & Dissertations Project

Title:	Synthesis and characterization of phosphosilicate glass films by LPCVD for sensor application
Author:	Wu, Hui
View Online:	njit-etd1997-109 (xi, 57 pages ~ 2.0 MB pdf)
Department:	Committee for the Interdisciplinary Program in Materials Science and Engineering
Degree:	Master of Science
Program:	Materials Science and Engineering
Document Type:	Thesis
Advisory Committee:	Levy, Roland A. (Committee chair) Federici, John Francis (Committee member) Krasnoperov, Lev N. (Committee member)
Date:	1997-10
Keywords:	Silicon-carbide thin films. Silicon-carbide thin films--Effect of temperature on.
Availability:	Unrestricted
Abstract:	This study was dedicated to the synthesis of the thin film materials required to fabricate the waveguide and the reference arm barrier for integrated optical sensor. Phosphosilicate glass (PSG) thin films were synthesized on silicon and quartz wafers by LPCVD using Ditertiarybutylsilane(DTBS), Trimethylphosphite(TMP) and oxygen as precursors. The films were processed at different temperatures between 600°C and 700°C at a constant pressure, and at different flow rate of TMP. The effect of TMP flow rate and deposition temperature on deposition parameters and the properties of PSG films were investigated. The films deposited were uniform, amorphous, low stress and the composition of the films varied with deposition temperature and TMP flow rate. The deposition rate increased with increasing TMP flow rate and had a maximum of deposition rate at 650 °C. It was suggested that the addition of TMP catalyzes the deposition. Refractive index increased with increasing deposition temperature and phosphorus concentration. A less transparent film at higher temperatures also suggested presence of carbon at higher temperatures, This may be due to a possible decomposition reaction of TMP or DTBS. The PSG films showed around 100% transparency when deposited at 650 °C.