The New Jersey Institute of Technology's
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Title:	Modeling and investigation of current transport phenomena in schottky structures
Author:	Zeng, Yan
View Online:	njit-etd1993-169 (ix, 71 pages ~ 2.2 MB pdf)
Department:	Department of Electrical and Computer Engineering
Degree:	Master of Science
Program:	Electrical Engineering
Document Type:	Thesis
Advisory Committee:	Ravindra, N. M. (Committee chair) Misra, Durgamadhab (Committee member) Grebel, Haim (Committee member)
Date:	1993-05
Keywords:	Electric contacts Diodes, Schottky-barrier Semiconductor-metal boundaries
Availability:	Unrestricted
Abstract:	We have used a numerical method to describe the importance of the contribution of generation-recombination current to the I-V characteristics of Schottky barrier contacts. The current-voltage relationship is derived directly from the fundamental set of equations such as Poisson; current-density and continuity equations, without having to make many simplifications or approximations. The final result includes not only the thermionic emission or drift diffusion mechanisms of current flow, but also the generation recombination processes. The experimental devices used for this work are very common low barrier height Schottky structures, Al/T0.3W0.7/n-Si/A1 and Ti0.3W0.7/n-Si/Al. The comparison between the measured and simulated results strongly showed the effect of recombination current as an important factor for even relatively low barrier height devices in the low bias region. From derived expression of the I-V characteristics, we can accurately fit the experimental results just simply by adding the term for the recombination effects. A good estimation for the values of recombination current effect can be calculated from I-V expression used for this work.