The New Jersey Institute of Technology's
Electronic Theses & Dissertations Project

Title:	Synthesis and characterization of LPCVD boron nitride films for x-ray lithography
Author:	Kuo, Wen-Pin
View Online:	njit-etd1993-102 (x, 86 pages ~ 2.2 MB pdf)
Department:	Committee for the Interdisciplinary Program in Materials Science and Engineering
Degree:	Master of Science
Program:	Materials Science and Engineering
Document Type:	Thesis
Advisory Committee:	Levy, Roland A. (Committee co-chair) Grow, James M. (Committee co-chair)
Date:	1993-01
Keywords:	Chemical vapor deposition X-ray lithography Thin films Boron nitride -- Synthesis
Availability:	Unrestricted
Abstract:	Boron nitride thin films were deposited on silicon and fused quartz substrates using ammonia and the liquid precursor borane-triethylamine complex (TEAB) by low pressure chemical vapor deposition over a temperature range of 300-850°C, a pressure range of 0.21-0.6 torr, and an ammonia flow rate range of 0-740 sccm. An increased in the nitrogen content in the film due to the addition of ammonia flow resulted in a pronounced improvement in the optical transmission, an increase in the film uniformity and a decrease in the depletion effect. IR spectra of the films showed an asymmetrical wide band centered around 1400 cm-1 and a sharp band around 800 cm-1. Boron-silicon nitride films were prepared with the incorporation of silicon into the BN films using liquid precursor mixtures consisting of TEAB and hexamethyldisilane (HMDS) at a given temperature, pressure, and ammonia flow rate. The addition of silicon to the films resulted in an achievement of tensile stress and showed an improvement in the mechanical strength of the films. In the IR spectra, two strong absorption peaks centered at 1300 cm-1 and 950 cm-1 appeared. Boron-silicon nitride membranes, 1 µm in thickness, were successfully made.