Ravindra, N. M. (Committee chair)
Kosonocky, Walter F. (Committee member)
Sohn, Kenneth (Committee member)
Date:
1993-10
Keywords:
Light filters
Light filters -- Design and construction
Thin films -- Optical properties
Availability:
Unrestricted
Abstract:
In-situ temperature monitoring, mapping, and control have become significant in semiconductor processes. Temperature of these processes can be measured by making use of the thermal emission from substrates in the infrared region. Various methods have been proposed to provide multicolor infrared detection. One such method involves placing segmented infrared filters close to the focal plane. The present study aims at gaining an insight into the design, fabrication and characterization of infrared filters. Filters were designed and fabricated with peak transmission at 1.5, 3.0, and 4.5 m. Extensive spectroscopic studies, using FTIR spectroscopy, have been performed in the infrared region, on the materials chosen for the filters - Si, SiO2, and Al2O3. The spectral transmittance characteristics of the filters have also been studied using optical spectrometry to monitor their performance at the desired wavelengths.
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