The New Jersey Institute of Technology's
Electronic Theses & Dissertations Project

Title:	Optimization of a 3-micron BCCD process for high density CCD registers
Author:	Ratner, Mark
View Online:	njit-etd1992-106 (xii, 179 pages ~ 4.6 MB pdf)
Department:	Department of Electrical and Computer Engineering
Degree:	Master of Science
Program:	Electrical Engineering
Document Type:	Thesis
Advisory Committee:	Kosonocky, Walter F. (Committee chair) Sohn, Kenneth (Committee member) Misra, Durgamadhab (Committee member)
Date:	1992-05
Keywords:	Charge coupled devices -- Computer simulation Mathematical optimization -- Computer programs
Availability:	Unrestricted
Abstract:	In July 1991, Dr. Walter F. Kosonocky proposed a High-Frame-Rate-CCD Imager. The design of the imager is such that the CCD channel width be 3-microns and capable of handling at least 3000 - 5000 electrons per square micron. Using process (SUPREM III) and device (PISCES IIB) simulations, charge handling capacities as a function of implant energy and junction depth were studied. Arsenic implants ranging from 100 to 200keV were driven-in to obtain junction depths between 0.40µm and 0.80µm. As a result of this work it was determined that charge handling capacities as high as 9400 electrons/µm2 were achievable with implanted doses of 1.6E12 ions/cm2. This thesis is a description of the simulation and analysis techniques used to optimize the charge handhng capacity of a 31.1m wide BCCD channel.