The New Jersey Institute of Technology's
Electronic Theses & Dissertations Project

Title:	Low temperature synthesis and characterization of LPCVD silicon dioxide films using diethylsilane
Author:	Gorthy, Chakravarthy Srinivasa
View Online:	njit-etd1992-076 ( x, 57 pages ~ 1.8 MB pdf)
Department:	Committee for the Interdisciplinary Program in Materials Science and Engineering
Degree:	Master of Science
Program:	Engineering Science
Document Type:	Thesis
Advisory Committee:	Levy, Roland A. (Committee co-chair) Grow, James M. (Committee co-chair) Kristol, David S. (Committee member)
Date:	1992-05
Keywords:	Vapor-plating Silcon oxide films Thin films Low pressure chemical vapor deposition Diethylsilane Silcon dioxide films
Availability:	Unrestricted
Abstract:	Diethylsilane (DES) has been used as a precursor to produce silicon dioxide films by low pressure chemical vapor deposition. These films were synthesized in the temperature range of 350 to 475°C thus allowing the use of the material as an intermetal dielectric or as a top layer passivation coating in microelectronic devices. In that process, the growth rate was observed to follow an Arrhenius behavior yielding an activation energy of 10 kcal/mol. The growth rate was also observed to increase with higher pressure and to vary as a function of the square root of the DES flow rate and O2/DES ratio. In both the pressure and the O2/DES ratio studies, there were points of abrupt cessation in deposition. The density of the films was measured to be close to 2.2 g/cm3 regardless of deposition conditions. RBS measurements revealed the absence of incorporated carbon and a near stochiometric composition of SiO2.2. The dielectric breakdown strength of an SiO2 film deposited at 400 °C was found to be 2 MV/cm. Infrared spectra of the films showed the usual Si-0 bond stretching and bond bending absorption bands centered at 1060, 810, and 440 cm-1. Si-H bending band at 880 cm-1 was also observed in SiO2 films prepared under certain processing conditions. The refractive index of the films was found to be at 1.46 independent of deposition temperature.