The New Jersey Institute of Technology's
Electronic Theses & Dissertations Project

Title:	Electrical properties of metal semiconductor contacts - metals on MoS2: a case study
Author:	Chang, Xiao
View Online:	njit-etd2017-134 (xii, 66 pages ~ 2.4 MB pdf)
Department:	Department of Physics
Degree:	Master of Science
Program:	Applied Physics
Document Type:	Thesis
Advisory Committee:	Ravindra, N. M. (Committee chair) Jaffe, Michael (Committee member) Ahn, Ken Keunhyuk (Committee member) Georgiou, George E. (Committee member)
Date:	2017-12
Keywords:	Monolayer semiconductor Semiconductor properties Molybdenum disulfide
Availability:	Unrestricted
Abstract:	Properties of monolayer semiconductor, MoS2, are presented in the research. Schottky barrier height and Schottky-Mott rules are discussed. The current-voltage measurement and capacitance-voltage measurement are analyzed considering the role of the work function. We mainly focus on metal semiconductor contacts on molybdenum disulfide (MoS2). The properties of bulk and monolayer molybdenum disulfide are discussed. The differences between the bulk and monolayer, based on band gap structure theory, are presented. Utilizing the data obtained in the literature, the influence of temperature on the electrical properties of monolayer molybdenum disulfide are analyzed. In particular, the electrical properties of metals on MoS2 such as current-voltage (I-V) characteristics and capacitance-voltage (C-V) characteristics are addressed. Applications of metals on MoS2 are presented.