The New Jersey Institute of Technology's
Electronic Theses & Dissertations Project

Title:	Three-dimensional magnetic field sensor in IBM 0.18?m CMOS technology
Author:	Wang, Gang
View Online:	njit-etd2012-070 (xiv, 58 pages ~ 1.5 MB pdf)
Department:	Department of Electrical and Computer Engineering
Degree:	Master of Science
Program:	Electrical Engineering
Document Type:	Thesis
Advisory Committee:	Misra, Durgamadhab (Committee chair) Sosnowski, Marek (Committee member) Hou, Edwin (Committee member)
Date:	2012-05
Keywords:	3D magnetic field sensor Complementary metal-oxide-semiconductor
Availability:	Unrestricted
Abstract:	This work presents a compact three-dimensional Magnetic Field Sensor (MFS) designed in standard Complementary Metal-Oxide-Semiconductor (CMOS) technology. A circular Vertical Hall Device (VHD) for horizontal magnetic field detection and a split- drain Horizontal Hall Device (HHD) for the vertical magnetic field detection are integrated to implement the three-dimensional M FS. This merged design has the advantage of smaller area and lower power consumption. The sensitivity of the vertical hall device (ring-shaped magneto-resistor) and the horizontal hall device (Split-Drain Magnetic Field-Effect Transistor (SD-MAGFET)) is estimated as 0.11V/T and 2.88V/T respectively. The vertical direction of the magnetic field detection demonstrates a higher sensitivity. A high gain cascode differential amplifier is integrated with the sensor to further amplify the magnetic signal.