The New Jersey Institute of Technology's
Electronic Theses & Dissertations Project

Title:	Optical properties of SiGe nanostructures
Author:	Sharma, Varun
View Online:	njit-etd2005-014 (ix, 37 pages ~ 3.3 MB pdf)
Department:	Department of Electrical and Computer Engineering
Degree:	Master of Science
Program:	Electrical Engineering
Document Type:	Thesis
Advisory Committee:	Tsybeskov, Leonid (Committee chair) Grebel, Haim (Committee member) Sosnowski, Marek (Committee member)
Date:	2005-01
Keywords:	Raman Scattering photoluminescence
Availability:	Unrestricted
Abstract:	In this thesis, Raman Scattering (RS) and photoluminescence (PL) measurements of Ge nanowires (NWs) grown via vapor-liquid-solid (VLS) using chemical vapor deposition silicon substrates consisting of (100) and (111) crystallographic orientations are reported. Ge NWs grown are ~40 nm in diameter, approximately a micrometer in length, and a sharp narrow Raman peak at ~300cm-1 indicates single crystal quality. An absence of SiGe peak in the Raman spectra indicates that SiGe interdiffusion is insignificant for the NW volume. Low temperature PL-intensity-dependence spectra indicate that the observed emission originates at the Ge NW - Si substrate interface, where SiGe intermixing has been detected. This interface is formed differently for (111) and (100) oriented Si substrates due to the <111> preferential growth direction of Ge NWs.