The New Jersey Institute of Technology's
Electronic Theses & Dissertations Project

Title:	Current-voltage characteristics of TaSi2/Si and MOS devices using Labview
Author:	Tangirala, Prasant
View Online:	njit-etd2000-088 (xii, 94 pages ~ 7.1 MB pdf)
Department:	Department of Electrical and Computer Engineering
Degree:	Master of Science
Program:	Computer Engineering
Document Type:	Thesis
Advisory Committee:	Ravindra, N. M. (Committee chair) Hubbi, Walid (Committee member) Hou, Edwin (Committee member) Ivanov, Dentcho V. (Committee member) Gokce, Oktay H. (Committee member)
Date:	2000-05
Keywords:	Diodes. Semiconductors.
Availability:	Unrestricted
Abstract:	Analyses of current-voltage (LV) characteristics of Schottky Barrier Diodes (Tantalum Suicide) and Metal Oxide Semiconductor (MOS) Devices, using LabVIEWTM, has been presented here. LabVIEWTMTM, a graphical program development application, has been used to program a computer-driven Keithley Source Measure Unit (SMU) for device characterization. The SMU, which can be used as a Source Voltage - Measure Current as well as Source Current - Measure Voltage instrument, is used in the Source Voltage -Measure Current mode in this study. A General Purpose Interface Bus (GPIB) IEEE 488.2 has been used to interface the SMU with LabVIEWTMTM. LabVIEWTM has been successfully implemented to obtain the current-voltage characteristics of semiconductor devices, such as TaSi2 /Si and MOS structures. Based on this characterization, factors such as the barrier height for TaSi2 /Si and current conduction mechanisms in MOS device structures have been evaluated.