The New Jersey Institute of Technology's
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Title:	Low pressure chemical vapor deposition (LPCVD) of titanium nitride : synthesis and characterization
Author:	Dharmadhikari, Sameer Narsinha
View Online:	njit-etd1999-055 (xi, 55 pages ~ 3.2 MB pdf)
Department:	Department of Chemical Engineering, Chemistry and Environmental Science
Degree:	Master of Science
Program:	Chemical Engineering
Document Type:	Thesis
Advisory Committee:	Levy, Roland A. (Committee chair) Loney, Norman W. (Committee member) Grow, James M. (Committee member)
Date:	1999-01
Keywords:	Chemical vapor deposition. Titanium. Thin films.
Availability:	Unrestricted
Abstract:	Titanium tetrachioride and ammonia were used as precursors in a Jow pressure chemical vapor deposition process to deposit titanium nitride films on silicon wafers. The process was carried out at temperatures from 450 to 850 C and the activation energy for the reaction was determined. The order of the reaction, with respect to the partial pressures of the reactant gases, was determined by carrying out the reaction at varying partial pressures of the reactant gases. The following rate equation was established for the reaction: rate = 4.35*10-5exp(-5150/T)*(PNH3)1.37(PTicl4)-0.42 The titanium nitride thin films deposited were characterized for properties like resistivity, stress, hardness, and density. The effects of varying the process parameters (temperature, flow ratio, etc.) on these film properties were studied.