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The New Jersey Institute of Technology's
Electronic Theses & Dissertations Project

Title: Radiative properties of IR materials
Author: Babladi, Manish R.
View Online: njit-etd1999-036
(xi, 79 pages ~ 3.8 MB pdf)
Department: Department of Electrical and Computer Engineering
Degree: Master of Science
Program: Electrical Engineering
Document Type: Thesis
Advisory Committee: Ravindra, N. M. (Committee chair)
Sohn, Kenneth (Committee member)
Hou, Edwin (Committee member)
Gokce, Oktay H. (Committee member)
Date: 1999-05
Keywords: Infrared technology
Heat--Radiation and absorption
Materia--Thermal properties.
Availability: Unrestricted
Abstract:

The objective of this thesis is to study the radiative properties of materials of interest in the infrared range of wavelengths. In particular, three distinct materials have been considered here - Erbium oxide, alumina and quartz. Erbium oxide has unique selective line emission, which gives a high emittance at a particular wavelength and low emittance in the rest of the infrared spectrum. It has applications in the design and development of thermophotovoltaic (TPV) generators. Because of its selective emission properties, erbium oxide assists in concentrating the radiant energy into a narrow band near the bandgap energy of the TPV cell, and this results in an efficient energy conversion. Lucalox and sapphire which are JR transparent materials are used as selective absorbers for increasing the efficiency of TPV generators. A novel spectral emissometer has been utilized for measurement of the temperature dependent radiative properties of erbium oxide, sapphire and lucalox. The experimental results presented in this thesis showed that the measurement of high temperature optical properties of these materials can be performed reliably with a novel non-contact, real-time approach using the spectral emissometer. The emissivity of erbium oxide is observed to be low and constant in the wavelength range of 2 to 5 microns and at various temperatures studied. Sapphire and lucalox exhibit almost similar characteristics in 1 to 3.3 micron region. All the materials investigated in this thesis are potential candidates for gate dielectrics in MOS technology.


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