The New Jersey Institute of Technology's
Electronic Theses & Dissertations Project

Title:	Development and characteristics of carbon nitride thin solid films for advanced coating applications
Author:	Hussain, Muhammad A.
View Online:	njit-etd1998-066 (xii, 73 pages ~ 4.7 MB pdf)
Department:	Department of Chemical Engineering, Chemistry and Environmental Science
Degree:	Master of Science
Program:	Chemical Engineering
Document Type:	Thesis
Advisory Committee:	Levy, Roland A. (Committee chair) Tompa, Gary S. (Committee member) Korenev, S. A. (Committee member)
Date:	1998-01
Keywords:	Thin films. Silicon - carbide thin films.
Availability:	Unrestricted
Abstract:	Carbon nitride films were synthesized on silicon substrate by reactive magnetron sputtering of graphite target in an environment of Ar and nitrogen gas. The performance of a negative carbon ion source was also investigated to use the source in negative ion-beam-assisted deposition. These films were synthesized at room temperature at a constant pressure of 5 mtorr and at 300 Watts R.17 power, but at different composition of nitrogen in Ar-N2 gas mixture ranging from 0-53 percent. The films deposited were microscopically smooth, amorphous and their properties found to be varied with nitrogen composition in plasma. The deposition rate was observed to increase with RP power and decrease with chamber pressure. Flux of charged species toward the substrate was also seen to increase with RE power but relatively less sensitive to chamber pressure. The scratch resistance of the film was found In be 0.35 N fit 23 percent nitrogen in plasma and increased with higher nitrogen composition. The microhardness of the film was measure to be about 14 GPa at 23 percent nitrogen composition in plasma was observed to decrease with higher nitrogen composition.