The New Jersey Institute of Technology's
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Title:	Synthesis and characterization of silicon dioxide thin films by low pressure chemical vapor deposition
Author:	Niyomwas, Sutham
View Online:	njit-etd1997-079 (x, 43 pages ~ 1.6 MB pdf)
Department:	Committee for the Interdisciplinary Program in Materials Science and Engineering
Degree:	Master of Science
Program:	Engineering Science
Document Type:	Thesis
Advisory Committee:	Levy, Roland A. (Committee chair) Krasnoperov, Lev N. (Committee member) Zaitsev, Vladimir (Committee member)
Date:	1997-01
Keywords:	Thin films. Vapor-plating.
Availability:	Unrestricted
Abstract:	Ditertiarybutylsilane ( DTBS ) and oxygen have been used as precursors to produce silicon dioxide films by low pressure chemical vapor deposition. These films were synthesized in the temperature range of 600°C to 800°C at constant pressure, and at different gas flow composition. The films were found to be uniform with a composition that varied with deposition temperature and gas flow ratio. The growth rate was found to follow an Arrhenius behavior with an apparent activation energy of 2.62 kcal/mol. The growth rate was seen to increase with higher distance between wafers and to vary as a function of square root of the 0, flow rate. The refractive index of the films were found to be 1.462 at deposition temperature 600°C and increased with higher temperature. The stresses were very low tensile in the films and tended to be compressive with increasing deposition temperature.