The New Jersey Institute of Technology's
Electronic Theses & Dissertations Project

Title:	Fabrication of integrated optic sensor to monitor pollutant concentration in effluents
Author:	Chatty, Kiran
View Online:	njit-etd1996-048 (xiii, 67 pages ~ 2.2 MB pdf)
Department:	Committee for the Interdisciplinary Program in Materials Science and Engineering
Degree:	Master of Science
Program:	Engineering Science
Document Type:	Thesis
Advisory Committee:	Levy, Roland A. (Committee chair) Krasnoperov, Lev N. (Committee member) Federici, John Francis (Committee member)
Date:	1996-10
Keywords:	Chemical vapor deposition. Silicon nitride. Silica. Optical spectrometers--Design and construction.
Availability:	Unrestricted
Abstract:	An attempt has been made to fabricate an integrated optic sensor to monitor pollutant concentration in effluents. Optic fiber has to be coupled to the waveguide in order to send light through the waveguide. In order to facilitate the easy coupling of the fiber to the waveguide, V-grooves were formed in the silicon substrate. In order to achieve this Silicon nitride was deposited to serve as an etch mask. An attempt was made to obtain low stress silicon nitride films. This work also attempted to synthesize the materials required to fabricate the waveguide. LPCVD processes were developed to produce undoped and Phosphorus doped SiO2, films. Undoped SiO2 is used as a cladding material for waveguide. The Phosphorus doped SiO2 (PSG) is the core material of the waveguide. Diethylsilane (DES) was used as a precursor for the deposition of the undoped oxide and Trimethylphosphite (IMP) was used as the Phosphorus source for the deposition of the PSG films. Conditions for dry etching of SiO2 and PSG was developed.