In this thesis, the design and fabrication of a silicon knife is described. The device design is based on the principle of oxidation sharpening.
The knife is made from a silicon wafer and can be made to be any chosen length up to 150 mm. It was made with the same basic procedures used in semiconductor chip manufacturing. This type of processing/manufacturing results in a knife with a high degree of sharpness and smoothness compared with existing knife technology.
The knife fabrication plan combines IC processing, techniques including anisotropic and isotropic etching of silicon, plasma dry etching and chemical etching dry oxidation, and KOH etching.
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