The New Jersey Institute of Technology's
Electronic Theses & Dissertations Project

Title:	Low pressure chemical vapor deposition of silicon nitride films from tridimethylaminosilane
Author:	Lin, Xin
View Online:	njit-etd1995-093 (xvii, 121 pages ~ 3.9 MB pdf)
Department:	Committee for the Interdisciplinary Program in Materials Science and Engineering
Degree:	Master of Science
Program:	Materials Science and Engineering
Document Type:	Thesis
Advisory Committee:	Levy, Roland A. (Committee chair) Grow, James M. (Committee member) Kristol, David S. (Committee member)
Date:	1995-01
Keywords:	Silicon nitride. Thin films. Chemical vapor deposition. Tridimethylaminosilane.
Availability:	Unrestricted
Abstract:	In this study amorphous stoichiometric silicon nitride films were synthesized by low pressure chemical vapor deposition (LPCVD) using tri(dimethylamino) silane (TDMAS) and ammonia (NH3). The growth kinetics were determined as a function of temperature in the range of 650 - 900 °C, total pressure in the range of 0.15 - 0.60 Torr, and NH3/TDMAS flow ratio in the range of 0 - 10. At constant condition of pressure (0.5 Torr), TDMSA flow rate (10 sccm) and NH3 flow rate (100 sccm), the deposition rate of as-deposited silicon nitride films was found to follow an Arrehnius behavior in the temperature range of 650 - 800 °C with an activation energy of 41 ± 3 kcal mol-1. The film characterizations including compositional, structural, physical, optical and mechanical properties were determined by using XPS, RBS, X-ray diffraction, Nanospec interferometry, Ellipsometer, FTIR, UV Visible, as well as other techniques. The results demonstrated the feasibility of using TDMAS in the synthesis of high quality silicon nitride films by LPCVD.