The New Jersey Institute of Technology's
Electronic Theses & Dissertations Project

Title:	Processing, structural and electrical properties of SiC
Author:	Farhad-Garousi, Mark
View Online:	njit-etd1994-082 (xi, 69 pages ~ 2.7 MB pdf)
Department:	Committee for the Interdisciplinary Program in Materials Science and Engineering
Degree:	Master of Science
Program:	Materials Science and Engineering
Document Type:	Thesis
Advisory Committee:	Ravindra, N. M. (Committee chair) Russo, Onofrio L. (Committee member) Buteau, Leon Joseph (Committee member)
Date:	1994-05
Keywords:	Silicon-carbide. Silicon-carbide--Thermal properties. Silicon-carbide thin films. Silicon-carbide thin films--Thermal properties.
Availability:	Unrestricted
Abstract:	Cubic silicon carbide films grown by chemical vapor deposition (CVD) on silicon substrates typically have n-type conductivity at 300 °K dominated by a heavily compensated donor with a binding energy in the < 20 meV range. Binding energies <20 meV are not expected in SiC for isolated donors because the shallowest expected binding energy for an electron bound to an isolated donor is approximately 47 meV. The work done on this topic by a few group of scientists has been studied.