The New Jersey Institute of Technology's
Electronic Theses & Dissertations Project

Title:	Low temperature performance of field effect transistors
Author:	Zhu, Wei
View Online:	njit-etd1994-020 (x, 50 pages ~ 3.1 MB pdf)
Department:	Department of Physics
Degree:	Master of Science
Program:	Applied Physics
Document Type:	Thesis
Advisory Committee:	Hensel, John Charles (Committee chair) Chin, Ken K. (Committee member) Yan, Yuan (Committee member)
Date:	1994
Keywords:	Junction Transistors Field-effect Transistors Low Temperatures--Apparatus and Supplies
Availability:	Unrestricted
Abstract:	The low temperature static characteristics of silicon junction field-effecttransistors (JFETs) have been investigated and analysed. The followingchanges were observed after cooling down the transistors: pinch-offvoltage and transconductance increases; and drain current is changedas a function of the drain-source voltage. It was found that there wasan increase in the amplifying properties and a reduction in noise voltageof cooled transistors. In addition, the temperature and voltage dependenceof leakage current have been studied. Temperatures below 77K are ofinterest in evaluating effects of impurity freezeout and temperatureabove 77K are important since actual device temperature will be aboutthe ambient. Operation of FET circuits at liquid nitrogen temperaturehas been suggested as a means of improving circuit and system performance.