The New Jersey Institute of Technology's
Electronic Theses & Dissertations Project

Title:	Photoluminescence study of gallium arsenide, aluminum gallium arsenide, and gallium antimonide thin films grown by metalorganic chemical vapor deposition
Author:	Koons, John Mark
View Online:	njit-etd1994-008 (ix, 62 pages ~ 3.9 MB pdf)
Department:	Department of Physics
Degree:	Master of Science
Program:	Applied Physics
Document Type:	Thesis
Advisory Committee:	Chin, Ken K. (Committee chair) Hensel, John Charles (Committee member) Opyrchal, Halina (Committee member)
Date:	1994-01
Keywords:	Photoluminescence Thin films Gallium compounds Optoelectronic devices Chemical vapor deposition
Availability:	Unrestricted
Abstract:	The photoluminescence produced by four MOCVD grown epitaxial thin film samples was studied to give insight into sample quality. The four samples under this study were GaAs on a GaAs substrate, Al.25Ga.75As on a GaAs substrate, Al.30Ga.7OAs on a GaAs substrate, and GaSb on a GaSb substrate. Excitation was achieved through the use of the 514.0 nm line of an argon ion laser, and sample cooling was attained by use of a cryostat cooler using helium gas to attain a low temperature limit of 10°K. The GaAs and Al.30Ga.7OAs samples exhibited typical spectra for MOCVD grown samples produced by other sources in the widths of the resulting BE peaks and in the characterisitics, of their acceptor-induced transitions. The narrow, prominent BE peaks of the Al.25Ga.75As and GaSb samples had shown them to be of exceptional quality.