The New Jersey Institute of Technology's
Electronic Theses & Dissertations Project

Title:	Correlation of 1/f noise with threshold drift in MOSFET's
Author:	Rooney, John Peter
View Online:	njit-etd1969-001 (v, 56 pages ~ 2.9 MB pdf)
Department:	Department of Electrical Engineering
Degree:	Master of Science
Program:	Electrical Engineering
Document Type:	Thesis
Advisory Committee:	Misra, Raj Pratap (Committee chair) Zambuto, Mauro (Committee member) Meola, Robert R. (Committee member)
Date:	1969-06
Keywords:	Field-effect Transistors
Availability:	Unrestricted
Abstract:	A brief review of the fundamentals of MOSFET's is given. A correlation between threshold drift and surface states is made, with a following correlation between surface states and 1/f noise. It therefore follows that MOSFET's with a high 1/f noise level will drift more than those with a low level of 1/f noise. Experiments were carried out to show this effect, but no clear cut conclusions can be drawn from the experimental work.